| A Broadband Differential Traveling Wave Amplifier Based onthe 0. 7 μm InP HBT |
| Click here to download the full text |
| Citation of this paper: |
| Hits: 150 |
| Download times: 51 |
| Author Name | Affiliation | | YU Qin1,PAN Xiaofeng2,YU Weihua2,PAN Bei1,BI Bo1,GE Zhenting1 | 1. Nanjing Electronic Devices Institute, Nanjing 210016, China
2. School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China |
|
| |
| Abstract:This paper presents a broadband differential traveling-wave amplifier ( TWA) based on 0. 7 μm indium phosphide (InP) double-heterojunction bipolar transistor technology. The TWA integrates three gain cells, each designed with a cascode topology to achieve high gain. An emitter resistive degeneration is incorporated within each gain cell to reach a broad bandwidth. The collector bias is slightly below the value for the maximum current gain, which allows a frequency-invariant high-output power characteristic with a flat group delay. The TWA exhibits a gain of 13. 3 dB ranging from DC to 80. 6 GHz. It consumes 84 mA of DC current and an output power at 1 dB compression point (P1 dB) of 11 dBm. Moreover, the group delay satisfies the 12 ps fluctuation in the bandwidth range, and the flat group delay makes the traveling wave amplifier have important application value in high-speed optical communication systems, and has reference value for promoting the localization process of core devices. |
| keywords:InP HBT broadband traveling-wave amplifier differential amplifier |
| HTML View Full Text View/Add Comment Download reader |
|
|
|
