一种集成滤波器和天线的低剖面双功能射频器

A Low-profile Dual-function RF Device Integrating Filter and Antenna

中文关键词:  双端口射频器件  双极化天线  二阶滤波器  低剖面  选择性耦合  宽带阻带  工作频率比

英文关键词:two-port RF device  dual-polarized antenna  two-order filter  low profile  discriminating coupling  wide stopband  operating frequency ratio

中文摘要:

      文中介绍了一种低剖面的双端口射频器件,它集成了一个二阶滤波器和双极化天线。文中采用选择性耦合技术来抑制谐振器的谐波,从而为滤波器提供宽阻带。同时,谐振器本身作为馈线,为一个贴片天线提供了双极化辐射,而不会占用额外的器件面积。天线的工作频率位于滤波器的第二谐波频率点。由于采用选择性耦合技术,谐波模式不会影响天线的性能,这意味着天线和滤波器的工作频率比可以扩展。为了验证该设计方案,文中制作并测试了所提出的双端口射频器件。实验结果表明,该器件在1. 81 GHz 处作为双极化天线工作,同时在0. 9 GHz 处作为滤波器工作。在天线功 能方面,水平和垂直极化状态下的测量峰值增益分别为5. 5 dBi 和5. 8 dBi。两种极化状态之间的辐射性能具有良好的一致性。在滤波器功能方面,它的工作频率位于0. 8 GHz,具有高选择性和宽阻带(0. 9 GHz~2. 0 GHz)的特性。该器件的总剖面为2. 5 mm。基于以上性能,所提出的射频器件可以为未来低剖面、高集成度的通信系统设计提供方案。

英文摘要:

      This paper introduces a two-port RF device integrating a dual-polarized (DP) antenna and a two-order filter with a low profile. Discriminating coupling is introduced to suppress the harmonic of resonators, contributing to a wide stopband for filter.At the same time, the resonators themselves function as the feeding lines for a patch antenna without occupying extra area, providing DP radiation performances. The operating frequency of antenna locates at the second harmonic frequency point of filter. Due to the discriminating coupling scheme, the harmonic mode will not affect the antenna performance, which means the operating frequency ratio of the antenna and filter can be extended. For verification, the proposed two-port RF device is fabricated and measured. Experimental results show that the device functions as a DP antenna at 1. 81 GHz, and simultaneously as a filter at around 0. 9 GHz. For antenna function, the measured peak gain of 5. 5 dBi and 5. 8 dBi are obtained for horizontal and vertical polarization states, respectively. Good agreement in the radiation performances can be observed between two polarized states. With respect to filter function, its operating frequency locates at 0. 8 GHz with high selectivity and a stopband from 0. 9 GHz to 2 GHz.The total profile of the device is 2. 5 mm. With above performances, the proposed design can be a candidate for the future multichannel communication systems with low-profile and high-integration level.